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Ordering number : ENN7919
MCH6628
N-Channel and P-Channel Silicon MOSFETs
MCH6628
General-Purpose Switching Device Applications
Features
*
Package Dimensions
unit : mm 2173A
[MCH6628]
0.25
0.3 4 5 6 0.15
* *
The MCH6628 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive.
2.1
1.6
32 0.65 2.0
(Bottom view)
0.25
0.07
1
6
5
4
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions
0.85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
1
2
3
(Top view)
N-channel 30 10 0.35 1.4 0.8 150
P-channel -20 10 --1.0 --4.0
Unit V V A A W C C
--55 to +150
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 30 10 10 0.4 130 220 2.9 3.7 6.4 3.7 5.2 12.8 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : WC
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM 93004 TS IM TA-100978 No.7919-1/6
MCH6628
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=-500mA, VGS=--4V ID=-300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A IS=--1A, VGS=0 --0.4 0.7 1.2 380 540 115 23 15 8 6 15 7 1.5 0.4 0.3 --0.9 --1.5 500 760 --20 --1 10 --1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA IS=150mA, VGS=0 Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit [N-channel]
VIN 4V 0V VIN ID=80mA RL=187.5 VDD=15V
[P-channel]
VIN 0V --4V VIN ID= --500mA RL=20 VDD= --10V
D
PW=10s D.C.1%
VOUT PW=10s D.C.1%
D
VOUT
G
G
MCH6628 P.G 50
MCH6628 P.G 50
S
S
Electrical Connection
6
5
4
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
(Top view)
1
2
3
No.7919-2/6
MCH6628
0.16 0.14 0.12 0.10 0.08
ID -- VDS
2. 5V
[Nch]
0.30
ID -- VGS
--25 C
VDS=10V
[Nch]
3.0 V
3.5V 4.0V
V 6.0
2
.0V
0.25
Ta=
Drain Current, ID -- A
Drain Current, ID -- A
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.10
75 C
0.05
Ta =
0 0 0.5 1.0
--2
5 C
25 C
1.5
2.0
75
2.5
C
0.20
25
3.0 IT00030
Drain-to-Source Voltage, VDS -- V
10 9
IT00029
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
[Nch] Ta=25C
RDS(on) -- ID
C
[Nch] VGS=4V
2 3 5 IT00032
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
8 7 6
5
Ta=75C
3
80mA
5
25C --25C
ID=40mA
4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
2
1.0 0.01
2
3
5
7
0.1
Gate-to-Source Voltage, VGS -- V
10
IT00031
RDS(on) -- ID
Drain Current, ID -- A
100 7
[Nch] VGS=2.5V
RDS(on) -- ID
[Nch] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5 3 2
5
Ta=75C 25C
3
--25C
10 7 5 3 2
Ta=75C --25C 25C
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Drain Current, ID -- A
1.0
[Nch] Forward Transfer Admittance, yfs -- S
yfs -- ID
[Nch] VDS=10V
7 5
Static Drain-to-Source On-State Resistance, RDS(on) --
6
25C
3 2
5
4
3
40 I D= 80m I D=
,V mA
=2 GS 4.0V S= A, VG
.5V
Ta= --
25C
75C
0.1 7 5 3 2
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
IT00035
Drain Current, ID -- A
No.7919-3/6
MCH6628
1.0 7 5
IF -- VSD
[Nch] VGS=0 Switching Time, SW Time -- ns
1000 7 5 3 2
SW Time -- ID
[Nch] VDD=15V VGS=4V
Forward Current, IF -- A
3 2
Ta =
C
75 C
td (off) tf
tr
25
7 5 3 2
--2 5
C
0.1
100 7 5 3 2
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
100 7 5
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
10 9
[Nch] f=1MHz Gate-to-Source Voltage, VGS -- V
VGS -- Qg
[Nch]
VDS=10V ID=150mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
10 7 5 3 2
Ciss Coss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch] 100s
1m s
3 2 1.0
IDP=1.4A
Drain Current, ID -- A
7 5 3 2 0.1 7 5 3 2 0.01
ID=0.35A
10m
s
DC
Operation in this area is limited by RDS(on).
100
ope
ms
ion
rat
Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit
2 3 5 7 10 2 3 5 IT02877
1.0
Drain-to-Source Voltage, VDS -- V
--1.0
ID -- VDS
0V
5V --2 .
[Pch]
--2.0
ID -- VGS
Ta =-25 C 25 C 75 C
1.0
[Pch]
--4. 0V
VDS= --10V
--1.8 --1.6
--0.8
Drain Current, ID -- A
--3 .
--0.9
--0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5
. --2
0V
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8
VGS= --1.5V
--0.4 --0.2 0 --0.6 --0.7 --0.8 --0.9 --1.0 0 0.5
25
1.5
75 C C --25 C
2.0
--0.6
Ta =
2.5
3.0 IT03369
Drain-to-Source Voltage, VDS -- V
IT03368
Gate-to-Source Voltage, VGS -- V
No.7919-4/6
MCH6628
1000
RDS(on) -- VGS
[Pch] Ta=25C
1000
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 IT03370
Static Drain-to-Source On-State Resistance, RDS(on) -- m
900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160
ID= --0.3A --0.5A
I D=
A, --0.3
= --2 VGS
.5V
0.5 I D= --
= --4.0 A, V GS
V
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
Ambient Temperature, Ta -- C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IT03371
[Pch] VDS= --10V
IF -- VSD
Forward Transfer Admittance, yfs -- S
[Pch] VGS=0
2
1.0 7 5
25
C
Ta=
--25
C
C
75
3 2
Forward Current, IF -- A
0.1 --0.01
2
3
5
7
--0.1
2
3
5
Drain Current, ID -- A
3 2
7 --1.0 IT03372
--0.01 --0.2
--0.3
--0.4
--0.5
Ta= 75
--0.6
25C --25C
--0.7 --0.8 --0.9
C
--1.0
--1.1
--1.2
SW Time -- ID
[Pch]
3 2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
IT03373
[Pch] f=1MHz
VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
100 7 5
Ciss
100 7 5
2 10 7 5 3 2 1.0 --0.1
td(off)
td(on) tf
tr
3
3 2
Coss
Crss
10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID -- A
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2
IT03374
Drain-to-Source Voltage, VDS -- V
--10 7 5 3 2
IT03375
VGS -- Qg
[Pch]
ASO
[Pch] <10s
1m s
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1A Drain Current, ID -- A
IDP= --4.0A
--1.0 7 5 3 2 --0.1 7 5 3 2
ID= --1.0A
10
ms
DC
Operation in this area is limited by RDS(on).
10
op
0m
s
era
tio
n
1.4
1.6
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit
2 3 5 7 --1.0 2 3 5 7 --10 2 3
Total Gate Charge, Qg -- nC
IT03376
Drain-to-Source Voltage, VDS -- V
IT03377
No.7919-5/6
MCH6628
1.0
PD -- Ta
[Nch, Pch]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
0.4
ar
d(
90
0m
m2 !0
0.2
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT02879
Note on usage : Since the MCH6628 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2004. Specifications and information herein are subject to change without notice.
PS No.7919-6/6

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